| 臺大學術典藏 |
2022-03-22T08:30:43Z |
Modulation of zirconia ferroelectricity via crystal orientation of PT electrode
|
Zhuang Y.-X;Shieh J;Chen M.-J;Lin H.-C.; Zhuang Y.-X; Shieh J; Chen M.-J; Lin H.-C.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
|
Chou C.-Y;Lee W.-H;Chuu C.-P;Chen T.-A;Hou C.-H;Yin Y.-T;Wang T.-Y;Shyue J.-J;Li L.-J;Chen M.-J.; Chou C.-Y; Lee W.-H; Chuu C.-P; Chen T.-A; Hou C.-H; Yin Y.-T; Wang T.-Y; Shyue J.-J; Li L.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang C.-I;Wang C.-Y;Chang T.-J;Jiang Y.-S;Shyue J.-J;Lin H.-C;Chen M.-J.; Wang C.-I; Wang C.-Y; Chang T.-J; Jiang Y.-S; Shyue J.-J; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:46Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
|
Wang C.-Y;Chou C.-Y;Shiue H.-F;Chen H.-Y;Ling C.-H;Shyue J.-J;Chen M.-J.; Wang C.-Y; Chou C.-Y; Shiue H.-F; Chen H.-Y; Ling C.-H; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:45Z |
Enhancement of the anticoagulant capacity of polyvinyl chloride tubing for cardiopulmonary bypass circuit using aluminum oxide nanoscale coating applied through atomic layer deposition
|
Wang C.-C;Wang L.-C;Yang K.-C;Chen M.-J;Lin H.-C;Han Y.-Y.; Wang C.-C; Wang L.-C; Yang K.-C; Chen M.-J; Lin H.-C; Han Y.-Y.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:45Z |
Effect of atomic layer plasma treatment on TALD-ZrO2 film to improve the corrosion protection of Mg-Ca alloy
|
Lin P.C;Lin K.F;Chiu C;Semenov V.I;Lin H.C;Chen M.J.; Lin P.C; Lin K.F; Chiu C; Semenov V.I; Lin H.C; Chen M.J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:44Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
|
Wang C.-I;Chen H.-Y;Wang C.-Y;Chang T.-J;Jiang Y.-S;Chang C.-S;Chen M.-J.; Wang C.-I; Chen H.-Y; Wang C.-Y; Chang T.-J; Jiang Y.-S; Chang C.-S; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:44Z |
Modulation of zirconia ferroelectricity via crystal orientation of PT electrode
|
Zhuang Y.-X;Shieh J;Chen M.-J;Lin H.-C.; Zhuang Y.-X; Shieh J; Chen M.-J; Lin H.-C.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:44Z |
Improvement of Corrosion Resistance and Biocompatibility of Biodegradable Mg–Ca Alloy by ALD HfZrO2 Film
|
Lin P.-C;Lin K;Lin Y.-H;Yang K.-C;Semenov V.I;Lin H.-C;Chen M.-J.; Lin P.-C; Lin K; Lin Y.-H; Yang K.-C; Semenov V.I; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-03-22T08:27:43Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
|
Chang T.-J;Wang T.-Y;Wang C.-I;Huang Z.-D;Jiang Y.-S;Chou C.-Y;Kao W.-C;Chen M.-J.; Chang T.-J; Wang T.-Y; Wang C.-I; Huang Z.-D; Jiang Y.-S; Chou C.-Y; Kao W.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-02-21T23:30:44Z |
Improvement of Corrosion Resistance and Biocompatibility of Biodegradable Mg–Ca Alloy by ALD HfZrO2 Film
|
Lin, Pi Chen; Lin, Kaifan; Lin, Yu Hsuan; Yang, Kai Chiang; Semenov, Vladimir Ivanovitch; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-02-21T23:30:43Z |
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
|
Wang, Chun Yuan; Chou, Chun Yi; Shiue, Han Fang; Chen, Hsing Yang; Ling, Chen Hsiang; Shyue, Jing Jong; MIIN-JANG CHEN |
| 臺大學術典藏 |
2022-01-03T08:01:07Z |
Surface-enhanced Raman spectroscopy (SERS) of textured structures with anti-reflection by wet etching and island lithography
|
Hsin-Chia Ho; Bo-Kai Chao; Hsin-Hung Cheng; Li-Wei Nien; Miin-Jang Chen; Tadaaki Nagao; Jia-Han Li; Chun-Hway Hsueh*; JIA-HAN LI |
| 臺大學術典藏 |
2021-11-21T23:18:56Z |
Modulation of zirconia ferroelectricity via crystal orientation of PT electrode
|
Zhuang, Yong Xiang; TZONG-LIN JAY SHIEH; MIIN-JANG CHEN; HSIN-CHIH LIN |
| 臺大學術典藏 |
2021-10-21T23:27:31Z |
Evolution of pronounced ferroelectricity in Hf0.5Zr0.5O2thin films scaled down to 3 nm
|
Wang, Chin I.; Chen, Hsin Yang; Wang, Chun Yuan; Chang, Teng Jan; Jiang, Yu Sen; Chang, Chih Sheng; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-09-21T23:19:32Z |
Atomic layer deposited TiN capping layer for sub-10 nm ferroelectric Hf0.5Zr0.5O2 with large remnant polarization and low thermal budget
|
Wang, Chin I.; Wang, Chun Yuan; Chang, Teng Jan; Jiang, Yu Sen; Shyue, Jing Jong; HSIN-CHIH LIN; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-09-14T23:18:44Z |
Enhancement of the anticoagulant capacity of polyvinyl chloride tubing for cardiopulmonary bypass circuit using aluminum oxide nanoscale coating applied through atomic layer deposition
|
Wang, Chen Chie; Wang, Li Chun; Yang, Kai Chiang; MIIN-JANG CHEN; HSIN-CHIH LIN; YIN-YI HAN |
| 臺大學術典藏 |
2021-08-21T23:58:56Z |
Atomic Layer Nucleation Engineering: Inhibitor-Free Area-Selective Atomic Layer Deposition of Oxide and Nitride
|
Chou, Chun Yi; Lee, Wei Hao; Chuu, Chih Piao; Chen, Tse An; Hou, Cheng Hung; Yin, Yu Tung; Wang, Ting Yun; Shyue, Jing Jong; Li, Lain Jong; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-21T23:58:56Z |
Suppression of short channel effects in ferroelectric Si junctionless transistors with a sub-10 nm gate length defined by helium ion beam lithography
|
Chang, Teng Jan; Wang, Ting Yun; Wang, Chin I.; Huang, Zheng Da; Jiang, Yu Sen; Chou, Chun Yi; Kao, Wei Chung; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:02Z |
High- K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment
|
Chang T.-J;Lee W.-H;Wang C.-I;Yi S.-H;Yin Y.-T;Lin H.-C;Chen M.-J.; Chang T.-J; Lee W.-H; Wang C.-I; Yi S.-H; Yin Y.-T; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:02Z |
Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
|
Wang C.-I;Chang T.-J;Yin Y.-T;Jiang Y.-S;Shyue J.-J;Chen M.-J.; Wang C.-I; Chang T.-J; Yin Y.-T; Jiang Y.-S; Shyue J.-J; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:01Z |
Low-Temperature Physical Adsorption for the Nucleation of Sub-10 nm Al2O3Gate Stack on Top-Gated WS2Transistors
|
Lin Y.-S;Hoo J.-Y;Chung T.-F;Yang J.-R;Chen M.-J.; Lin Y.-S; Hoo J.-Y; Chung T.-F; Yang J.-R; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:01Z |
Impact of a TiN Capping Layer on Phase Transformation and Capacitance Enhancement in ZrO2
|
Wang C.-Y;Wang C.-I;Yi S.-H;Chang T.-J;Chou C.-Y;Yin Y.-T;Lin H.-C;Chen M.-J.; Wang C.-Y; Wang C.-I; Yi S.-H; Chang T.-J; Chou C.-Y; Yin Y.-T; Lin H.-C; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:01Z |
Operation bandwidth of negative capacitance characterized by the frequency response of capacitance magnification in ferroelectric/dielectric stacks
|
Jiang Y.-S;Jeng Y.-E;Yin Y.-T;Huang K.-W;Chang T.-J;Wang C.-I;Chao Y.-T;Wu C.-H;Chen M.-J.; Jiang Y.-S; Jeng Y.-E; Yin Y.-T; Huang K.-W; Chang T.-J; Wang C.-I; Chao Y.-T; Wu C.-H; Chen M.-J.; MIIN-JANG CHEN |
| 臺大學術典藏 |
2021-08-05T02:41:00Z |
Sub-7-nm textured ZrO2 with giant ferroelectricity
|
Huang K.-W;Yi S.-H;Jiang Y.-S;Kao W.-C;Yin Y.-T;Beck D;Korolkov V;Proksch R;Shieh J;Chen M.-J.; Huang K.-W; Yi S.-H; Jiang Y.-S; Kao W.-C; Yin Y.-T; Beck D; Korolkov V; Proksch R; Shieh J; Chen M.-J.; MIIN-JANG CHEN |
